ds30005 rev. d-3 1 of 3 bzm55c2v4-bzm55c75 bzm55c2v4 - bzm55c75 500mw surface mount zener diode features case: micromelf, glass terminals: solderable per mil-std-202, method 208 polarity: cathode band marking: cathode band only weight: 0.012 grams (approx.) maximum ratings and electrical characteristics @ t a = 25 c unless otherwise specified 500mw power dissipation high stability low noise hemetic package mechanical data characteristic symbol value unit power dissipation (note 1) p d 500 mw thermal resistance, junction to ambient air (note 1) r ja 300 k/w forward voltage @ i f = 200ma v f 1.5 v operating and storage temperature range t j, t stg -65 to +175 c a d c b micromelf dim min max a 1.8 2.0 b 1.20 1.25 c 1.35 typical all dimensions in mm notes: 1. valid provided that electrodes are kept at ambient temperature at a distance of 8.0mm from case. 2. tested with pulses, t p = 100ms.
ds30005 rev. d-3 2 of 3 bzm55c2v4-bzm55c75 type number nominal zener voltage zener voltage range (note 2) zener impedance leakage current @ v r temperature coefficient v z @i zt v z @i zt z zt @i zt z zk @i zk i r @ t a =25 c i r @ t a =150 c v r (v) (ma) min max ( )( ) (ma) ( a) ( a) (v) (%/ c) bzm55c2v4 2.4 5.0 2.28 2.56 < 85 < 600 1.0 < 50 < 100 1.0 -0.09 to -0.06 bzm55c2v7 2.7 5.0 2.5 2.9 < 85 < 600 1.0 < 10 < 50 1.0 -0.09 to -0.06 bzm55c3v0 3.0 5.0 2.8 3.2 < 90 < 600 1.0 < 4.0 < 40 1.0 -0.08 to -0.05 bzm55c3v3 3.3 5.0 3.1 3.5 < 90 < 600 1.0 < 2.0 < 40 1.0 -0.08 to -0.05 bzm55c3v6 3.6 5.0 3.4 3.8 < 90 < 600 1.0 < 2.0 < 40 1.0 -0.08 to -0.05 bzm55c3v9 3.9 5.0 3.7 4.1 < 90 < 600 1.0 < 2.0 < 40 1.0 -0.08 to -0.05 bzm55c4v3 4.3 5.0 4.0 4.6 < 90 < 600 1.0 < 1.0 < 20 1.0 -0.06 to - 0.03 bzm55c4v7 4.7 5.0 4.4 5.0 < 80 < 600 1.0 < 0.5 < 10 1.0 -0.05 to +0.02 bzm55c5v1 5.1 5.0 4.8 5.4 < 60 < 550 1.0 < 0.1 < 2.0 1.0 -0.02 to + 0.02 bzm55c5v6 5.6 5.0 5.2 6.0 < 40 < 450 1.0 < 0.1 < 2.0 1.0 -0.05 to +0.05 bzm55c6v2 6.2 5.0 5.8 6.6 < 10 < 200 1.0 < 0.1 < 2.0 2.0 0.03 to 0.06 bzm55c6v8 6.8 5.0 6.4 7.2 < 8.0 < 150 1.0 < 0.1 < 2.0 3.0 0.03 to 0.07 bzm55c7v5 7.5 5.0 7.0 7.9 < 7.0 < 50 1.0 < 0.1 < 2.0 5.0 0.03 to 0.07 bzm55c8v2 8.2 5.0 7.7 8.7 < 7.0 < 50 1.0 < 0.1 < 2.0 6.2 0.03 to 0.08 bzm55c9v1 9.1 5.0 8.5 9.6 < 10 < 50 1.0 < 0.1 < 2.0 6.8 0.03 to 0.09 bzm55c10 10 5.0 9.4 10.6 < 15 < 70 1.0 < 0.1 < 2.0 7.5 0.03 to 0.10 bzm55c11 11 5.0 10.4 11.6 < 20 < 70 1.0 < 0.1 < 2.0 8.2 0.03 to 0.11 bzm55c12 12 5.0 11.4 12.7 < 20 < 90 1.0 < 0.1 < 2.0 9.1 0.03 to 0.11 bzm55c13 13 5.0 12.4 14.1 < 26 < 110 1.0 < 0.1 < 2.0 10 0.03 to 0.11 bzm55c15 15 5.0 13.8 15.6 < 30 < 110 1.0 < 0.1 < 2.0 11 0.03 to 0.11 bzm55c16 16 5.0 15.3 17.1 < 40 < 170 1.0 < 0.1 < 2.0 12 0.03 to 0.11 bzm55c18 18 5.0 16.8 19.1 < 50 < 170 1.0 < 0.1 < 2.0 13 0.03 to 0.11 bzm55c20 20 5.0 18.8 21.2 < 55 < 220 1.0 < 0.1 < 2.0 15 0.03 to 0.11 bzm55c22 22 5.0 20.8 23.3 < 55 < 220 1.0 < 0.1 < 2.0 16 0.04 to 0.12 bzm55c24 24 5.0 22.8 25.6 < 80 < 220 1.0 < 0.1 < 2.0 18 0.04 to 0.12 bzm55c27 27 5.0 25.1 28.9 < 80 < 220 1.0 < 0.1 < 2.0 20 0.04 to 0.12 bzm55c30 30 5.0 28 32 < 80 < 220 1.0 < 0.1 < 2.0 22 0.04 to 0.12 bzm55c33 33 5.0 31 35 < 80 < 220 1.0 < 0.1 < 2.0 24 0.04 to 0.12 bzm55c36 36 5.0 34 38 < 80 < 220 1.0 < 0.1 < 2.0 27 0.04 to 0.12 bzm55c39 39 2.5 37 41 < 90 < 500 1.0 < 0.1 < 5.0 30 0.04 to 0.12 bzm55c43 43 2.5 40 46 < 90 < 600 0.5 < 0.1 < 5.0 33 0.04 to 0.12 bzm55c47 47 2.5 44 50 < 110 < 700 0.5 < 0.1 < 5.0 36 0.04 to 0.12 bzm55c51 51 2.5 48 54 < 125 < 700 0.5 < 0.1 < 10 39 0.04 to 0.12 bzm55c56 56 2.5 52 60 < 135 < 1000 0.5 < 0.1 < 10 43 0.04 to 0.12 bzm55c62 62 2.5 58 66 < 150 < 1000 0.5 < 0.1 < 10 47 0.04 to 0.12 bzm55c68 68 2.5 64 72 < 200 < 1000 0.5 < 0.1 < 10 51 0.04 to 0.12 bzm55c75 75 2.5 70 79 < 250 < 1500 0.5 < 0.1 < 10 56 0.04 to 0.12 notes: 1. valid provided that electrodes are kept at ambient temperature at a distance of 8.0mm from case. 2. tested with pulses, t p = 100ms. electrical characteristics @ t a = 25 c unless otherwise specified
ds30005 rev. d-3 3 of 3 bzm55c2v4-bzm55c75 0 50 100 150 200 0 510152025 c , diode cap acitance (pf) j v , zener voltage (v) fi g . 2 diode capacitance vs zener volta g e z v = 2.0v r t = 25 c j 1 10 100 1000 0 5 10 15 20 25 differential zener resist ance ( ) v , zener voltage (v) fi g . 3 differential zener impedance z i = 1.0ma z 5.0ma 10ma t = 25 c j 1.0 10 100 1000 0.1 1.0 10 100 r(t), normalized effective transient thermal resist ance (k/w) t , square wave pulse duration (seconds) fi g .4 t y pical normalized transient thermal impedance curves 1 1000 d = 0.5 0.2 0.1 0.05 0.02 0.01 t 1 t 2 p (pk) t - t = p r (t) duty cycle, d = t /t j a pk ja 12 * r (t) = r(t) r r = 300 k/w ja ja * ja 0 100 200 300 400 5 00 0 40 80 120 160 200 p , total power dissip ation (mw) d t , ambient temperature fi g .1 power dissipation vs ambient temperature a
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